Enhance your electronic projects with this high-performance 32KB FRAM Memory IC Development Module, designed for reliable, low-power data storage and fast access. Featuring a ferroelectric layer technology similar to DRAM, this memory module offers exceptional endurance and data retention, making it ideal for applications requiring frequent read/write cycles and long-term stability without a continuous power supply. Key Features: · High Endurance Non-Volatile Memory: Supports up to 10 trillion read/write cycles under normal conditions, ensuring exceptional durability for intensive data logging and processing tasks. · Fast and Instant Access: Each byte can be read and written instantly, providing quick data handling with a clock speed of up to 20 MHz for efficient performance. · Long Data Retention: Retains stored data for up to 95 years at room temperature, making it suitable for applications where data preservation is critical even without power. · Low Power Operation: Operates within a wide voltage range of 2.7V to 5.5V, perfect for low-power devices and battery-operated systems. · Ideal for Data Loggers and Unstable Power Environments: Especially suited for use in low-power data loggers and scenarios where voltage supply may be intermittent, ensuring data integrity and reliability. · Flexible Addressing: Supports addressing with 1010 + A2 + A1 + A0, allowing easy integration into various system architectures. Specifications: · Memory Capacity: 32KB · Clock Speed: Up to 20 MHz · Voltage Range: 2.7V to 5.5V (VCC/Logic) · Default Device Address: 0x50 · Addressing Mode: 1010 + A2 + A1 + A0 Package Includes: · 1 x FRAM Memory IC Development Module This FRAM Memory IC Development Module is an excellent choice for engineers and developers seeking a robust, high-speed, and energy-efficient memory solution. Its combination of fast access, long-term data retention, and high endurance makes it perfect for embedded systems, data logging, and applications requiring stable memory performance under varying power conditions.