Purpose and key benefits Precise component testing for engineers and technicians: measures MOSFET gate threshold voltage and gate capacitance, and verifies protection diodes in both MOSFETs and bipolar transistors. Helps you quickly identify faulty parts and confirm component parameters without dismantling circuits. Saves diagnostic time and reduces trial-and-error: direct measurements of transistor and diode behavior remove guesswork during repair, prototyping, and quality checks. Reliable electrical performance data: includes transistor-specific measurements such as current gain (hFE) and base-emitter threshold voltage for bipolar transistors, plus high-resolution resistance testing. Main functions and compatible components MOSFET measurement: determines gate threshold voltage and gate capacitance values. Diode detection: verifies the presence and orientation of protection diodes on bipolar transistors and MOSFETs. Bipolar transistor measurement: measures current gain factor (hFE) and base-emitter threshold voltage. Resistance measurement: resolution of 0.1 Ohm; capable of measuring up to 50 M Ohm. Performance highlights High-resolution resistance readings (0.1 Ohm) for accurate low-resistance testing. Wide resistance range up to 50 M Ohm to cover a broad set of passive and active components. Component-specific measurements (gate threshold, gate capacitance, hFE, Vbe) provide actionable data for troubleshooting and verification. Practical attributes Function-focused: designed to evaluate MOSFETs and bipolar transistors and related diodes with direct electrical parameters relevant to design, repair, and QC. Compatibility: supports common discrete power and signal transistors and their integrated protection diodes. Performance-oriented: delivers electrical measurements that match typical bench and field testing needs. Example use scenarios 1. Repair bench diagnostics: Quickly check whether a MOSFET has a defective gate or protection diode before replacing the part, using gate threshold and diode checks to decide repair steps. 2. Prototype validation: Measure MOSFET gate capacitance and threshold voltage to verify component behavior under designed gate-drive conditions and ensure stable switching in a new power-stage design. 3. Incoming quality control: Verify batches of bipolar transistors by checking hFE and base-emitter threshold voltage and perform resistance spot checks up to 50 M Ohm to detect out-of-spec or damaged parts. Tone and reliability Designed for practical, repeatable measurements that support engineering, maintenance, and test workflows. Focused on delivering the specific parameters technicians and engineers need without unnecessary complexity.